Silicon NPN Transistor
Final RF Power Output

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.
&127; Specified 12.5 Volt, 30 MHz
&127; Output Power = 60 Watts
&127; Minimum Gain = 13 dB
&127; Efficiency = 55%

In the push–pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance.
The matching procedure used by Motorola consists of measuring hFE at the data sheet conditions and color coding the device to predetermined hFE ranges within the normal hFE limits. A color dot is added to the marking on top of the cap. Any two devices with the same color dot can be paired together to form a matched set of units.

Absolute Maximum Ratings:
Collector-Emitter Voltage (RBE = Infinity), VCEO 18V
Collector-Base Voltage, VCBO 36V
Emitter-Base Voltage, VEBO 4,0V
Collector Current, IC 15A
Collector Power Dissipation (TC = +50C), PD 175W
Storage Temperature Range, Tstg -65 to +150C
Thermal Resistance, Junction-to-Case, RthJC 1C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0 18 - - V
Collector-Emitter Breakdown Voltage V(BR)CES IC = 50mA, VBE = 0 36 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 1 mA
DC Forward Current Gain hFE VCE = 5V, IC = 500mA 10 - 150  
Power Gain GP VCC = 12,5V, Pout = 60W, f = 30MHz 13 - - dB

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