KTC2078

KTC2078
Silicon NPN Transistor
Final RF Power Output



The KTC2078 is a silicon NPN triple diffused type transistor designed for CB tranceiver TX final amplifier application and HF transceiver application.
WINTransceiver	B C E

Features:

High Power Gain
Wide Area of Safe Operation.

Application:

Recommended for Output Stage Application of AM 4W Transmitter.

Absolute Maximum Ratings: (T_C = +25°C unless otherwise specified)

Collector-Emitter Voltage (R_BE = Infinity), V_CEO	80V
Collector-Base Voltage, V_CBO	80V
Emitter-Base Voltage, V_EBO	4V
Collector Current, I_C	4A
Collector Power Dissipation (T_C = +50°C), P_D	10W
Operating Junction Temperature, T_J	+150°C
Storage Temperature Range, T_stg	-55° to +150°C

Electrical Characteristics: (T_C = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector-Emitter Breakdown Voltage V_(BR)CEO I_C = 10mA, R_BE = Infinity 80 - - V

Emitter-Base Breakdown Voltage V_(BR)EBO I_E = 1mA, I_C = 0 4 - - V

Collector Cutoff Current I_CBO V_CB = 30V I_E = 0 - - 10 µA

DC Forward Current Gain h_FE V_CE = 5V, I_C = 0,5mA 100 - 200

Transition Frequency f_T V_CE = 5V, I_C = 500mA 100 - - MHz

Power Output P_O V_CC = 12V, P_in = 0,3W, f = 27MHz 4 - - W

CB Radio Banner Exchange

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Emitter Breakdown Voltage	V_(BR)CEO	I_C = 10mA, R_BE = Infinity	80	-	-	V
Emitter-Base Breakdown Voltage	V_(BR)EBO	I_E = 1mA, I_C = 0	4	-	-	V
Collector Cutoff Current	I_CBO	V_CB = 30V I_E = 0	-	-	10	µA
DC Forward Current Gain	h_FE	V_CE = 5V, I_C = 0,5mA	100	-	200
Transition Frequency	f_T	V_CE = 5V, I_C = 500mA	100	-	-	MHz
Power Output	P_O	V_CC = 12V, P_in = 0,3W, f = 27MHz	4	-	-	W

KTC2078Silicon NPN TransistorFinal RF Power Output

The KTC2078 is a silicon NPN triple diffused type transistor designed for CB tranceiver TX final amplifier application and HF transceiver application.

Features:

Application:

KTC2078
Silicon NPN Transistor
Final RF Power Output