The KTC1969 is a silicon NPN triple diffused type transistor designed for CB tranceiver TX final amplifier application and HF transceiver application. |  |
| WINTransceiver |
| Collector-Emitter Voltage (RBE = Infinity), VCEO | 25V |
| Collector-Base Voltage, VCBO | 60V |
| Emitter-Base Voltage, VEBO | 5V |
| Collector Current, IC | 6A |
| Collector Power Dissipation (TC = +50°C), PD | 20W |
| Operating Junction Temperature, TJ | +150°C |
| Storage Temperature Range, Tstg | -55° to +150°C |
Electrical Characteristics: (TC = +25°C unless otherwise specified)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC = 1mA, IE = 0 | 60 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 10mA, RBE = Infinity | 25 | - | - | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 5mA, IC = 0 | 5 | - | - | V |
| Collector Cutoff Current | ICBO | VCB = 30V IE = 0 | - | - | 10 | µA |
| Emitter Cutoff Current | IEBO | VEB = 4V, IC = 0 | - | - | 100 | µA |
| DC Forward Current Gain | hFE | VCE = 12V, IC = 10mA, Note 1 | 55 | - | 180 | |
| Transition Frequency | fT | VCE = 5V, IC = 500mA | 100 | - | - | MHz |
| Power Output | PO | VCC = 12V, Pin = 1W, f = 27MHz | 16 | - | - | W |