The KTC1006 is a silicon NPN epitaxial planar type transistor designed for CB tranceiver TX driver amplifier application. |  |
| WINTransceiver |
| Collector-Emitter Voltage (RBE = Infinity), VCEO | 80V |
| Collector-Base Voltage, VCBO | 80V |
| Emitter-Base Voltage, VEBO | 5V |
| Collector Current, IC | 800mA |
| Collector Power Dissipation (TC = +50°C), PD | 1W |
| Operating Junction Temperature, TJ | +150°C |
| Storage Temperature Range, Tstg | -55° to +150°C |
Electrical Characteristics: (TC = +25°C unless otherwise specified)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector Cutoff Current | ICBO | VCB = 60V IE = 0 | - | - | 0,1 | µA |
| Collector Cutoff Current | ICER | VCB = 80V RBE = 220ohm | - | - | 0,1 | µA |
| DC Forward Current Gain | hFE | VCE = 2V, IC = 150mA | 100 | - | - | |
| Transition Frequency | fT | VCE = 5V, IC = 500mA | - | 150 | - | MHz |