The 2SC1973 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on HF band mobile radio applications. |  |
| WINTransceiver |
| Collector-Emitter Voltage (RBE = Infinity), VCEO | 20V |
| Collector-Base Voltage, VCBO | 30V |
| Emitter-Base Voltage, VEBO | 3V |
| Collector Current, IC | 0,3A |
| Collector Power Dissipation (TA = +25°C), PD | 0,9W |
| Operating Junction Temperature, TJ | +150°C |
| Storage Temperature Range, Tstg | -55° to +150°C |
Electrical Characteristics: (TC = +25°C unless otherwise specified)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC = 100uA, IE = 0 | 30 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 1mA, RBE = Infinity | 20 | - | - | V |
| Collector Cutoff Current | ICBO | VCB = 25V IE = 0 | - | - | 1 | µA |
| Emitter Cutoff Current | IEBO | VEB = 3V, IC = 0 | - | - | 10 | µA |
| DC Forward Current Gain | hFE | VCE = 5V, IC = 50mA, Note 1 | 50 | - | 200 | |
| Gain-Bandwidth Product | fT | VCC = 5V, IC = 50mA | 1,5 | 2,5 | - | GHz |