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2SC3142
Silicon NPN Transistor
High frequency amplifier applications.

The 2SC3142 is a silicon NPN planar epitaxial transistor in a SOT type package. This device is suitable for use as Low Noise RF amplifier applications

WINTransceiver

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO 25V
Collector-Emitter Voltage, VCEO 20V
Emitter-Base Voltage, VEBO 3V
Collector Current, IC 30mA
Total Device Dissipation (TA = +25°C), PD 150mW/FONT>
Operating Junction Temperature, TJ +125°C
Storage Temperature Range, Tstg -40° to +125°C


Electrical Characteristics:
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Current Transfer Ratio hFE VCE = 10V, IC = 8mA 40 - 180  
Power Gain PG VCE = 6V, IC = 1mA, f = 100MHz - 28 - dB
Gain-Bandwidth Product fT IC = 5mA, VCE = 10V, f = 100MHz 450 750 - MHz
Noise Figure NF IC = 1mA, VCB = 6V, f = 100MHz - 2,2 - dB


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