2SC2509

2SC2509
Silicon NPN Transistor
Final RF Power Output



Description: The 2SC2509 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.
WINTransceiver	B C E

Features:

High Power Gain: G_pe >/= 12dB (V_CC = 12V, P_O = 16W, f = 27MHz)
Ability to Withstand Infinite VSWR Load when Operated at:
V_CC = 16V, P_O = 20W, f = 27MHz

Application:

10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band

Absolute Maximum Ratings: (T_C = +25°C unless otherwise specified)

Collector-Emitter Voltage (R_BE = Infinity), V_CEO	25V
Collector-Base Voltage, V_CBO	60V
Emitter-Base Voltage, V_EBO	5V
Collector Current, I_C	6A
Collector Power Dissipation (T_A = +25°C), P_D	1.7W
Collector Power Dissipation (T_C = +50°C), P_D	20W
Operating Junction Temperature, T_J	+150°C
Storage Temperature Range, T_stg	-55° to +150°C
Thermal Resistance, Junction-to-Case, R_thJC	6.25°C/W
Thermal Resistance, Junction-to-Ambient, R_thJA	73.5°C/W

Electrical Characteristics: (T_C = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector-Base Breakdown Voltage V_(BR)CBO I_C = 1mA, I_E = 0 60 - - V

Collector-Emitter Breakdown Voltage V_(BR)CEO I_C = 10mA, R_BE = Infinity 25 - - V

Emitter-Base Breakdown Voltage V_(BR)EBO I_E = 5mA, I_C = 0 5 - - V

Collector Cutoff Current I_CBO V_CB = 30V I_E = 0 - - 100 µA

Emitter Cutoff Current I_EBO V_EB = 4V, I_C = 0 - - 100 µA

DC Forward Current Gain h_FE V_CE = 12V, I_C = 10mA, Note 1 10 50 180

Power Output P_O V_CC = 12V, P_in = 1W, f = 27MHz 16 18 - W

Collector Efficiency 60 70 - %

CB Radio Banner Exchange

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	V_(BR)CBO	I_C = 1mA, I_E = 0	60	-	-	V
Collector-Emitter Breakdown Voltage	V_(BR)CEO	I_C = 10mA, R_BE = Infinity	25	-	-	V
Emitter-Base Breakdown Voltage	V_(BR)EBO	I_E = 5mA, I_C = 0	5	-	-	V
Collector Cutoff Current	I_CBO	V_CB = 30V I_E = 0	-	-	100	µA
Emitter Cutoff Current	I_EBO	V_EB = 4V, I_C = 0	-	-	100	µA
DC Forward Current Gain	h_FE	V_CE = 12V, I_C = 10mA, Note 1	10	50	180
Power Output	P_O	V_CC = 12V, P_in = 1W, f = 27MHz	16	18	-	W
Collector Efficiency		V_CC = 12V, P_in = 1W, f = 27MHz	60	70	-	%

2SC2509Silicon NPN TransistorFinal RF Power Output

Description: The 2SC2509 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

Features:

Application:

2SC2509
Silicon NPN Transistor
Final RF Power Output

Description:
The 2SC2509 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.