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2SC2166
Silicon NPN Transistor
Final RF Power Output

The 2SC2166 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

WINTransceiver
B C E

Features:

Application:

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 75V
Collector-Base Voltage, VCBO 75V
Emitter-Base Voltage, VEBO 5V
Collector Current, IC 4A
Collector Power Dissipation (TA = +25°C), PD 1.5W
Collector Power Dissipation (TC = +50°C), PD 12,5W
Operating Junction Temperature, TJ +150°C
Storage Temperature Range, Tstg -55° to +150°C
Thermal Resistance, Junction-to-Case, RthJC 10°C/W
Thermal Resistance, Junction-to-Ambient, RthJA 83°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 75 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 75 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 µA
DC Forward Current Gain hFE VCE = 12V, IC = 100mA, Note 1 35 70 180  
Power Output PO VCC = 12V, Pin = 0,25W, f = 27MHz 6 7,5 - W
Collector Efficiency   55 60 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.



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