The 2SC1969 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. |
 |
| WINTransceiver |
|
| Collector-Emitter Voltage (RBE = Infinity), VCEO | 25V |
| Collector-Base Voltage, VCBO | 60V |
| Emitter-Base Voltage, VEBO | 5V |
| Collector Current, IC | 6A |
| Collector Power Dissipation (TA = +25°C), PD | 1.7W |
| Collector Power Dissipation (TC = +50°C), PD | 20W |
| Operating Junction Temperature, TJ | +150°C |
| Storage Temperature Range, Tstg | -55° to +150°C |
| Thermal Resistance, Junction-to-Case, RthJC | 6.25°C/W |
| Thermal Resistance, Junction-to-Ambient, RthJA | 73.5°C/W |
Electrical Characteristics: (TC = +25°C unless otherwise specified)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC = 1mA, IE = 0 | 60 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 10mA, RBE = Infinity | 25 | - | - | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 5mA, IC = 0 | 5 | - | - | V |
| Collector Cutoff Current | ICBO | VCB = 30V IE = 0 | - | - | 100 | µA |
| Emitter Cutoff Current | IEBO | VEB = 4V, IC = 0 | - | - | 100 | µA |
| DC Forward Current Gain | hFE | VCE = 12V, IC = 10mA, Note 1 | 10 | 50 | 180 | |
| Power Output | PO | VCC = 12V, Pin = 1W, f = 27MHz | 16 | 18 | - | W |
| Collector Efficiency | 60 | 70 | - | % |
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
 |
 |