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2SC1909
Silicon NPN Transistor
Final RF Power Output

Description:

2SC1909 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.
WINTransceiver
B C E
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75V
Collector-Base Voltage, VCBO 80V
Emitter-Base Voltage, VEBO 5V
Collector Current, IC
            Continuous
            Peak		 3A
5A
Collector Power Dissipation (TA = +25°C), PD 1.2W
Collector Power Dissipation (TC = +50°C), PD 10W
Operating Junction Temperature, TJ +150°C
Storage Temperature Range, Tstg -55° to +150°C

Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 100µA, IB = 0 80 - - V
Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm 75 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 40V IE = 0 - - 10 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 10 µA
DC Current Gain hFE VCE = 5V, IC = 0.5A 25 - 200  
Collector-Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A - 0.15 0.60 V
Base-Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 0.1A - 0.9 1.2 V
Current Gain-Bandwidth Product fT VCE = 10V, IC = 0.1A 100 150 - MHz
Output Capacitance Cob VCB = 10V, f = 1MHz 25 - -  
Power Output PO VCC = 12V, Pin = 0.2W, f = 27MHz 4.0 - - W
Collector Efficiency   60 - - %


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