The 2SC1590 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications. |  |
| WINTransceiver |
| Collector-Emitter Voltage (RBE = Infinity), VCEO | 17V |
| Collector-Base Voltage, VCBO | 35V |
| Emitter-Base Voltage, VEBO | 4V |
| Collector Current, IC | 12A |
| Collector Power Dissipation (TA = +25°C), PD | 1.5W |
| Collector Power Dissipation (TC = +50°C), PD | 12.5W |
| Operating Junction Temperature, TJ | +150°C |
| Storage Temperature Range, Tstg | -55° to +150°C |
| Thermal Resistance, Junction-to-Case, RthJC | 10°C/W |
| Thermal Resistance, Junction-to-Ambient, RthJA | 83°C/W |
Electrical Characteristics: (TC = +25°C unless otherwise specified)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC = 10mA, IE = 0 | 35 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 50mA, RBE = Infinity | 17 | - | - | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 5mA, IC = 0 | 4 | - | - | V |
| Collector Cutoff Current | ICBO | VCB = 25V IE = 0 | - | - | 500 | µA |
| Emitter Cutoff Current | IEBO | VEB = 3V, IC = 0 | - | - | 500 | µA |
| DC Forward Current Gain | hFE | VCE = 10V, IC = 100mA, Note 1 | 10 | 50 | 180 | |
| Power Output | PO | VCC = 13.5V, Pin = 600mW, f = 175MHz | 6 | 7 | - | W |
| Collector Efficiency | 60 | 70 | - | % |
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.