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2N5943
Silicon NPN Transistor
Broadband CATV Driver

Description:
The 2N5943 is an silicon NPN transistor in a TO39 type package designed to be utilized in broadband and linear amplifier circuitry requiring low noise and low intermodulation distortion.

TO-39 Case
WINTransceiver
C  B  E

Features:

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO 50V
Collector-Emitter Voltage, VCEO 30V
Emitter-Base Voltage, VEBO 5V
Maximum Collector Current, IC 400mA
Total Device Dissipation (TA = +25°C), Ptot 3.5W
Junction Temperature, TJ +200°C
Storage Temperature Range, Tstg -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC +50°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 5mA, IB = 0, Note 1 30 - - V
Collector-Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0, Note 1 50 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 30 - - V
Collector Cutoff Current ICEO VCE = 28V, IB = 0 - - 0.1 mA
ON Characteristics
DC Current Gain hFE VCE = 15V, IC = 50mA 30 - 300  
Dynamic Characteristics
Current Gain-Bandwidth Product fT VCE = 28V, IC = 50mA, f = 200MHz 1500 1800 - MHz
Collector Output Capacitance Cob VCB = 30V, IE = 0, f = 1MHz - 2.5 3.5 pF
Collector Input Capacitance Cib VEB = 500mV, IC = 0, f = 1MHz - 8 10 pF
Functional Test
Noise Figure, Narrow Band NFNB VCE = 10V, IC = 10mA, f = 200MHz - 2.7 - dB
Noise Figure, Broad Band NFBB VCE = 15V, IC = 50mA, f = 216MHz - 7.0 8.0 dB
Power Gain at Optimum Noise Figure GVE VCE = 15V, IC = 50mA, f = 260MHz 6.8 7.2 - dB
Cross Modulation X-MOD VCE = 15V, IC = 50mA, PO = +45dBmV, Note 2 - -60 -57 dB
Second Order Distortion 2nd O VCE = 15V, IC = 50mA, PO = +45dBmV, Note 3 - -60 -57 dB
Note 1. Pulsed through 25mH Inductor.
Note 2. 12 Channel Flat - NCTA Channel 2 through 12 100% Mod (Square wave) Channel 13CW.
Note 3. Channel 2 and Channel G Intermod Product on Channel 13.




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