2N5943

2N5943
Silicon NPN Transistor
Broadband CATV Driver



Description: The 2N5943 is an silicon NPN transistor in a TO39 type package designed to be utilized in broadband and linear amplifier circuitry requiring low noise and low intermodulation distortion.
WINTransceiver	C B E

Features:

High Gain-Bandwidth Product: f_T = 1.5GHz Typ
Low Intermodulation, Low Cross-Modulation Distortion: X-MOD = -57dB
Low Noise Figure: NF = 2.7dB Typ
Low Output Capacitance: C_ob = 3.5pF Max @ V_CB = 30V

Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)

Collector-Base Voltage, V_CBO	50V
Collector-Emitter Voltage, V_CEO	30V
Emitter-Base Voltage, V_EBO	5V
Maximum Collector Current, I_C	400mA
Total Device Dissipation (T_A = +25°C), P_tot	3.5W
Junction Temperature, T_J	+200°C
Storage Temperature Range, T_stg	-65° to +200°C
Thermal Resistance, Junction-to-Case, R_thJC	+50°C/W

Electrical Characteristics: (T_C = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector-Emitter Breakdown Voltage V_(BR)CEO I_C = 5mA, I_B = 0, Note 1 30 - - V

Collector-Base Breakdown Voltage V_(BR)CBO I_C = 0.1mA, I_E = 0, Note 1 50 - - V

Emitter-Base Breakdown Voltage V_(BR)EBO I_E = 0.1mA, I_C = 0 30 - - V

Collector Cutoff Current I_CEO V_CE = 28V, I_B = 0 - - 0.1 mA

ON Characteristics

DC Current Gain h_FE V_CE = 15V, I_C = 50mA 30 - 300

Dynamic Characteristics

Current Gain-Bandwidth Product f_T V_CE = 28V, I_C = 50mA, f = 200MHz 1500 1800 - MHz

Collector Output Capacitance C_ob V_CB = 30V, I_E = 0, f = 1MHz - 2.5 3.5 pF

Collector Input Capacitance C_ib V_EB = 500mV, I_C = 0, f = 1MHz - 8 10 pF

Functional Test

Noise Figure, Narrow Band NF_NB V_CE = 10V, I_C = 10mA, f = 200MHz - 2.7 - dB

Noise Figure, Broad Band NF_BB V_CE = 15V, I_C = 50mA, f = 216MHz - 7.0 8.0 dB

Power Gain at Optimum Noise Figure G_VE V_CE = 15V, I_C = 50mA, f = 260MHz 6.8 7.2 - dB

Cross Modulation X-MOD V_CE = 15V, I_C = 50mA, P_O = +45dBmV, Note 2 - -60 -57 dB

Second Order Distortion 2nd O V_CE = 15V, I_C = 50mA, P_O = +45dBmV, Note 3 - -60 -57 dB

Note 1. Pulsed through 25mH Inductor.
Note 2. 12 Channel Flat - NCTA Channel 2 through 12 100% Mod (Square wave) Channel 13CW.
Note 3. Channel 2 and Channel G Intermod Product on Channel 13.

CB Radio Banner Exchange

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage	V_(BR)CEO	I_C = 5mA, I_B = 0, Note 1	30	-	-	V
Collector-Base Breakdown Voltage	V_(BR)CBO	I_C = 0.1mA, I_E = 0, Note 1	50	-	-	V
Emitter-Base Breakdown Voltage	V_(BR)EBO	I_E = 0.1mA, I_C = 0	30	-	-	V
Collector Cutoff Current	I_CEO	V_CE = 28V, I_B = 0	-	-	0.1	mA
ON Characteristics
DC Current Gain	h_FE	V_CE = 15V, I_C = 50mA	30	-	300
Dynamic Characteristics
Current Gain-Bandwidth Product	f_T	V_CE = 28V, I_C = 50mA, f = 200MHz	1500	1800	-	MHz
Collector Output Capacitance	C_ob	V_CB = 30V, I_E = 0, f = 1MHz	-	2.5	3.5	pF
Collector Input Capacitance	C_ib	V_EB = 500mV, I_C = 0, f = 1MHz	-	8	10	pF
Functional Test
Noise Figure, Narrow Band	NF_NB	V_CE = 10V, I_C = 10mA, f = 200MHz	-	2.7	-	dB
Noise Figure, Broad Band	NF_BB	V_CE = 15V, I_C = 50mA, f = 216MHz	-	7.0	8.0	dB
Power Gain at Optimum Noise Figure	G_VE	V_CE = 15V, I_C = 50mA, f = 260MHz	6.8	7.2	-	dB
Cross Modulation	X-MOD	V_CE = 15V, I_C = 50mA, P_O = +45dBmV, Note 2	-	-60	-57	dB
Second Order Distortion	2nd O	V_CE = 15V, I_C = 50mA, P_O = +45dBmV, Note 3	-	-60	-57	dB

2N5943Silicon NPN TransistorBroadband CATV Driver

Description: The 2N5943 is an silicon NPN transistor in a TO39 type package designed to be utilized in broadband and linear amplifier circuitry requiring low noise and low intermodulation distortion.

Features:

2N5943
Silicon NPN Transistor
Broadband CATV Driver

Description:
The 2N5943 is an silicon NPN transistor in a TO39 type package designed to be utilized in broadband and linear amplifier circuitry requiring low noise and low intermodulation distortion.