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2N5108
Silicon NPN Transistor
Broadband RF Amplifier

Description:
The 2N5108 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA.
TO-39 Case
WINTransceiver
C  B  E


Features:

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO 20V
Collector-Base Voltage, VCBO 40V
Emitter-Base Voltage, VEBO 3V
Continuous Collector Current, IC 400mA
Continuous Base Current, IB 400mA
Total Device Dissipation (TC = +75°C, Note 1), PD 2.5W
            Derate above +25°C 20mW/°C
Storage Temperature Range, Tstg -65° to +200°C
Note 1. Total Device Dissipation at TA = +25°C is 1W.

Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector-Emitter Saturation Voltage VCEO(sus) IC = 5mA, IB = 0 20 - - V
VCER(sus) IC = 5mA, RBE = 10 Ohm, Note 2 40 - - V
Collector Cutoff Current ICEO VCE = 15V, IB = 0 - - 20 µA
ICEX VCE = 15V, VBE = -1.5V, TC = +150°C - - 5 mA
VCE = 15V, VBE = -1.5V - - 5 mA
Emitter Cutoff Current IEBO VBE = 3V, IC = 0 - - 100 µA
ON Characteristics
DC Current Gain hFE VCE = 5V, IC = 360mA 5 - -  
VCE = 15V, IC = 50mA 40 - 120  
Dynamic Characteristics
Current-Gain Bandwidth Product fT IC = 50mA, VCE = 15V, f = 200MHz 1200 - - MHz
Collector-Base Capacitance Ccb VCB = 15V, IE = 0, f = 1MHz - 1.8 3.5 pF
Noise Figure NF IC = 10mA, VCE = 15V, f = 200MHz - 3 - dB
Functional Test
Common-Emitter Amplifier Voltage Gain GVE IC = 50mA, VCC = 15V, f = 50 to 216MHz 11 - - dB
Power Input Pin IC = 50mA, VCC = 15V, RS = 50 Ohm, Pout = 1.26mW, f = 200MHz - - 0.1 mW
Note 1. Pulsed through a 25mH inductor; 50% Duty Cycle.




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