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2N3553
Silicon NPN Transistor
RF Power Driver

Description:
The 2N3553 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as an output, driver, or in predriver stages in VHF equipment.
TO-39 Case
WINTransceiver
C  B  E


Features:

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO     40V
Collector-Base Voltage, VCB, VDG2     65V
Emitter-Base Voltage, VEB, VDG2     4V
Collector Current, IC     1A
Total Device Dissipation (TC = +25°C), PD     7W
            Derate above 25°C     40mW/°C
Operating Junction Temperature Range, TJ     -65° to +200°C
Storage Temperature Range, Tstg     -65° to +200°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage Voltage VCEO(sus) IC = 200mA, IB = 0, Note 1 40 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 4 - - V
Collector Cutoff Current ICEO VCE = 30V, IB = 0 - - 0.1 mA
ICEX VCE = 30V, VBE(off) = 1.5V, TC = +200°C - - 5.0 mA
VCE = 65V, VBE(off) = 1.5V - - 1.0 mA
Emitter Cutoff Current IEBO VBE = 4V, IC = 0 - - 0.1 mA
ON Characteristics
DC Current Gain hFE VCE = 5V, IC = 5V 10 - -  
Collector-Emitter Saturation Voltage VCE(sat) IC = 250mA, IB = 50mA - - 1.0 V
Dynamic Characteristics
Current Gain-Bandwidth Product fT VCE = 28V, IC = 100mA, f = 100MHz - 500 - MHz
Output Capacitance Cob VCB = 30V, IE = 0, f = 100kHz - 8 10 pF
Functional Tests
Power Input Pin VCE = 28V, Pout = 2.5W, f = 175MHz - - 0.25 W
Common-Emitter Amplifier Power Gain Gpe 10 - - dB
Collector Efficiency   50 - - %

Note 1.Pulsed through a 25mH inductor.



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