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Description: The 2N3375 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance, and low output capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multiplier circuits and is specifically designed for operation in the VHF-UHF region. |
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| WINTransceiver |
| Collector-Base Voltage, VCBO | 65V |
| Collector-Emitter Voltage, VCEO | 40V |
| Emitter-Base Voltage, VEBO | 4V |
| Collector Current, IC | 1.5A |
| Total Device Dissipation (TC = +25°C), PD Derate Above 25°C |
11.6W 6.4mW/°C |
| Operating Junction Temperature Range, TJ | -65° to +200°C |
| Storage Temperature Range, Tstg | -65° to +200°C |
| Thermal Resistance, Junction-to-Case, RthJC | +15°C/W |
Electrical Characteristics: (TC = +25°C unless otherwise specified)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector Cutoff Current | ICEO | VCE = 30V, IB = 0 | - | - | 0.1 | mA |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC = 0.1mA, IE = 0 | 65 | - | - | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 0.1mA, IC = 0 | 4 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 0 to 200mA, IB = 0, Note 1 | 40 | - | - | V |
| V(BR)CEV | IC = 0 to 200mA, VBE = -1.5V, Note 1 | 65 | - | - | V | |
| Current Gain-Bandwidth Product | fT | VCE = 28V, IC = 150mA, f = 100MHz | - | 500 | - | MHz |
| Output Capacitance | Cob | VCB = 30V, IC = 0, f = 1MHz | - | - | 10 | pF |
| RF Power Output, Class C, Unneutralized | Pout | VCE = 28V, Pin = 1W, f = 175MHz | 3 | - | - | W |
Note 1. Pulsed through 25mH inductor, Duty Cycle = 50%.