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MRF454
Silicon NPN Transistor
Final RF Power Output

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.
&127; Specified 12.5 Volt, 30 MHz
&127; Output Power = 80 Watts
&127; Minimum Gain = 12 dB
Efficiency = 50%


Absolute Maximum Ratings:
Collector-Emitter Voltage (RBE = Infinity), VCEO 25V
Collector-Base Voltage, VCBO 45V
Emitter-Base Voltage, VEBO 4,0V
Collector Current, IC 20A
Collector Power Dissipation (TC = +50C), PD 250W
Storage Temperature Range, Tstg -65 to +150C
Thermal Resistance, Junction-to-Case, RthJC 0,7C/W


Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0 18 - - V
Collector-Emitter Breakdown Voltage V(BR)CES IC = 50mA, VBE = 0 36 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100mA, IC = 0 4 - - V
DC Forward Current Gain hFE VCE = 5V, IC = 5A 40 - 150  
Power Gain GP VCC = 12,5V, Pout = 80W, f = 30MHz 12 - - dB


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