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MRF262
Silicon NPN Transistor
RF Power Output


MRF260 - MRF262 Application notes (320kB)


The MRF262 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications.

B E C

Features:

Application:

Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17V
Collector-Base Voltage, VCBO 35V
Emitter-Base Voltage, VEBO 4V
Collector Current, IC 3.5A
Collector Power Dissipation (TA = +25C), PD 1.5W
Collector Power Dissipation (TC = +50C), PD 25W
Operating Junction Temperature, TJ +175C
Storage Temperature Range, Tstg -55 to +175C
Thermal Resistance, Junction-to-Case, RthJC 6C/W
Thermal Resistance, Junction-to-Ambient, RthJA 100C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 1000 A
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 500 A
DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180  
Power Output PO VCC = 13.5V, Pin = 2.5W, f = 175MHz 14 15 - W
Collector Efficiency   60 70 - %

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.



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