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Silicon NPN Transistor
High frequency amplifier applications.

The KTC3880 is a silicon NPN planar epitaxial transistor in a SOT type package. This device is suitable for use as RF amplifier applications.


Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO 40V
Collector-Emitter Voltage, VCEO 30V
Emitter-Base Voltage, VEBO 4V
Collector Current, IC 20mA
Total Device Dissipation (TA = +25C), PD
            Derate above +25C
Operating Junction Temperature, TJ +150C
Storage Temperature Range, Tstg -55 to +150C

Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Forward Current Transfer Ratio hFE VCE = 10V, IC = 8mA 40 - 200  
Power Gain PG VCE = 6V, IC = 1mA, f = 100MHz 15 18 - dB
Dynamic Characteristics
Gain-Bandwidth Product fT IC = 5mA, VCE = 10V, f = 100MHz - 550 - MHz
Noise Figure NF IC = 1mA, VCB = 6V, f = 100MHz - 2,5 5 dB

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