Silicon NPN Transistor
High frequency low noise amplifier applications.

The KTC3195 is a silicon NPN planar epitaxial transistor in a MINI (TO-92S) type package. This device is suitable for use as RF VHF Band amplifier applications.


Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO 40V
Collector-Emitter Voltage, VCEO 30V
Emitter-Base Voltage, VEBO 4V
Collector Current, IC 20mA
Total Device Dissipation (TA = +25C), PD
            Derate above +25C
Operating Junction Temperature, TJ +150C
Storage Temperature Range, Tstg -55 to +150C

Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Current Transfer Ratio hFE VCE = 6V, IC = 10mA 40 - 200  
Power Gain PG VCE = 6V, IC = 1mA, f = 100MHz - 18 - dB
Gain-Bandwidth Product fT IC = 1mA, VCE = 6V, f = 100MHz - 550 - MHz
Noise Figure NF IC = 1mA, VCB = 6V, f = 100MHz - 2,5 5 dB

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