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KTC2078
Silicon NPN Transistor
Final RF Power Output

The KTC2078 is a silicon NPN triple diffused type transistor designed for CB tranceiver TX final amplifier application and HF transceiver application.

WINTransceiver
B C E

Features:

Application:

Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 80V
Collector-Base Voltage, VCBO 80V
Emitter-Base Voltage, VEBO 4V
Collector Current, IC 4A
Collector Power Dissipation (TC = +50C), PD 10W
Operating Junction Temperature, TJ +150C
Storage Temperature Range, Tstg -55 to +150C

Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 80 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 10 A
DC Forward Current Gain hFE VCE = 5V, IC = 0,5mA 100 - 200  
Transition Frequency fT VCE = 5V, IC = 500mA 100 - - MHz
Power Output PO VCC = 12V, Pin = 0,3W, f = 27MHz 4 - - W


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