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KTC1969
Silicon NPN Transistor
Final RF Power Output

The KTC1969 is a silicon NPN triple diffused type transistor designed for CB tranceiver TX final amplifier application and HF transceiver application.

WINTransceiver
B C E

Features:

Application:

Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 25V
Collector-Base Voltage, VCBO 60V
Emitter-Base Voltage, VEBO 5V
Collector Current, IC 6A
Collector Power Dissipation (TC = +50C), PD 20W
Operating Junction Temperature, TJ +150C
Storage Temperature Range, Tstg -55 to +150C

Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 25 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 10 A
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 A
DC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 55 - 180  
Transition Frequency fT VCE = 5V, IC = 500mA 100 - - MHz
Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 16 - - W


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