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KTC1006
Silicon NPN Transistor

The KTC1006 is a silicon NPN epitaxial planar type transistor designed for CB tranceiver TX driver amplifier application.

WINTransceiver
E C B

Features:

Application:

Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 80V
Collector-Base Voltage, VCBO 80V
Emitter-Base Voltage, VEBO 5V
Collector Current, IC 800mA
Collector Power Dissipation (TC = +50C), PD 1W
Operating Junction Temperature, TJ +150C
Storage Temperature Range, Tstg -55 to +150C

Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 60V IE = 0 - - 0,1 A
Collector Cutoff Current ICER VCB = 80V RBE = 220ohm - - 0,1 A
DC Forward Current Gain hFE VCE = 2V, IC = 150mA 100 - -  
Transition Frequency fT VCE = 5V, IC = 500mA - 150 - MHz


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