Silicon NPN Transistor
High frequency applications.

The 2SC829 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as RF amplification, Oscillation, Mixing, and IF stage applications in FM/AM radios.


Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO 30V
Collector-Emitter Voltage, VCEO 20V
Emitter-Base Voltage, VEBO 5V
Collector Current, IC 30mA
Total Device Dissipation (TA = +25C), PD 400mW
Operating Junction Temperature, TJ +150C
Storage Temperature Range, Tstg -55 to +150C

Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Current Transfer Ratio hFE VCE = 10V, IC = 1mA 70 - 250  
Current Gain-Bandwidth Product fT VCE = 10V, IC = 1mA 150 230 - MHz

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