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2SC1973
Silicon NPN Transistor
RF Amplifier

The 2SC1973 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on HF band mobile radio applications.

WINTransceiver
B C E

Application:

Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 20V
Collector-Base Voltage, VCBO 30V
Emitter-Base Voltage, VEBO 3V
Collector Current, IC 0,3A
Collector Power Dissipation (TA = +25C), PD 0,9W
Operating Junction Temperature, TJ +150C
Storage Temperature Range, Tstg -55 to +150C

Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 100uA, IE = 0 30 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = Infinity 20 - - V
Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 1 A
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 10 A
DC Forward Current Gain hFE VCE = 5V, IC = 50mA, Note 1 50 - 200  
Gain-Bandwidth Product fT VCC = 5V, IC = 50mA 1,5 2,5 - GHz


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