Silicon NPN Transistor
High frequency amplifier applications.

The 2SC383 is a silicon NPN planar epitaxial transistor in a TO-92 type package.


Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO 50V
Collector-Emitter Voltage, VCEO 45V
Emitter-Base Voltage, VEBO 4V
Collector Current, IC 50mA
Total Device Dissipation (TA = +25C), PD 300mW
Operating Junction Temperature, TJ +125C
Storage Temperature Range, Tstg -55 to +125C

Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Current Transfer Ratio hFE VCE = 12,5V, IC = 12,5mA 20 - 100  
Power Gain PG VCE = 12,5V, IC = 12,5mA, f = 45MHz 29 - 36 dB
Gain-Bandwidth Product fT IC = 12,5mA, VCE = 12,5V 300 - - MHz

CB Radio Banner Exchange