Silicon NPN Transistor
High frequency applications.

The 2SC3582 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for low noise amplifier at VHF and UHF band.


Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO 20V
Collector-Emitter Voltage, VCEO 10V
Emitter-Base Voltage, VEBO 1,5V
Collector Current, IC 65mA
Total Device Dissipation (TA = +25C), PD600mW
Operating Junction Temperature, TJ +150C
Storage Temperature Range, Tstg -65 to +150C

Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Current Transfer Ratio hFE VCE = 8V, IC = 20mA 50 100 250  
Current Gain-Bandwidth Product fT VCE = 8V, IC = 20mA, - 8 - GHz
Power Gain PG f = 1GHz - 12 - dB
Noise Figure NF VCB = 8V, IC = 7mA, f = 1GHz - 1,2 2,5 dB

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