Silicon NPN Transistor
High frequency applications.

The 2SC3512 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in VHF and UHF wide band amplifier.


Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO 15V
Collector-Emitter Voltage, VCEO 11V
Emitter-Base Voltage, VEBO 2V
Collector Current, IC 50mA
Total Device Dissipation (TA = +25C), PD 600mW
Operating Junction Temperature, TJ +150C
Storage Temperature Range, Tstg -55 to +150C

Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Current Transfer Ratio hFE VCE = 5V, IC = 20mA 50 120 250  
Gain-Bandwidth Product fT VCE = 5V, IC = 20mA - 6 - GHz
Noise Figure NF VCB = 5V, IC = 5mA, f = 900MHz - 1,6 - dB
Power Gain PG VCE = 5V, IC = 20mA, f = 900MHz - 10,5 - dB

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