Silicon NPN Transistor
High frequency applications.

The 2SC3355 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for low noise amplifier at VHF and UHF band.


Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO 20V
Collector-Emitter Voltage, VCEO 15V
Emitter-Base Voltage, VEBO 3V
Collector Current, IC 100mA
Total Device Dissipation (TA = +25C), PD 600mW
Operating Junction Temperature, TJ +150C
Storage Temperature Range, Tstg -65 to +150C

Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Current Transfer Ratio hFE VCE = 10V, IC = 20mA 50 120 300  
Current Gain-Bandwidth Product fT VCE = 6V, IC = 20mA, - 6,5 - GHz
Power Gain PG VCE = 10V, IC = 20mA, f = 1GHz 11 - dB
Noise Figure NF VCB = 10V, IC = 7mA, f = 1GHz - 1,1 - dB

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