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2SC3299
Power Amp Driver, Output Switch

The 2SC3299 are silicon transistors in a TO-220 type package designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

WINTransceiver
B C E

Features:

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO 80V
Emitter-Base Voltage, VEB 5V
Collector Current, IC
            Continuous
            Peak (Note 1)
10A
20A
Total Power Dissipation (TC = +25C), PD 50W
Total Power Dissipation (TA = +25C), PD 1.67W
Operating Junction Temperature Range, TJ -55 to +150C
Storage Temperature Range, Tstg -55 to +150C
Thermal Resistance, Junction-to-Case, RthJC 2.5C/W
Thermal Resistance, Junction-to-Ambient, RthJA 75C/W
Lead Temperature (During Soldering, 1/8" from case, 5sec), TL +275C

Note 1. Pulse Width </= 6ms, Duty Cycle </= 50%.

Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector Cutoff Current ICES VCE = 80V, VBE = 0 - - 10 A
Emitter Cutoff Current IEBO VEB = 5V - - 100 A
ON Characteristics
DC Current Gain hFE VCE = 1V, IC = 2A, TJ = +25C 60 - -  
VCE = 1V, IC = 4A, TJ = +25C 40 - -  
Collector-Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 400mA - - 1.0 V
Base-Emitter Saturation Voltage VBE(sat) IC = 8A, IB = 800mA - - 1.5 V
Dynamic Characteristics
Collector Capacitance Ccb VCB = 10V, ftest = 1MHz - 130 - pF
Gain Bandwidth Product fT IC = 500mA, VCE = 10V, f = 20MHz - 50 - MHz
Switching Times
Delay and Rise Time td + tr IC = 5A, IB1 = 500mA - 300 - ns
Storage Time ts IC = 5A, IB1 = IB2 = 500mA - 500 - ns
Fall Time tf - 140 - ns


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