The 2SC3299 are silicon transistors in a TO-220 type package designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. |  |
| WINTransceiver |
| Collector-Emitter Voltage, VCEO | 80V |
| Emitter-Base Voltage, VEB | 5V |
| Collector Current, IC Continuous Peak (Note 1) |
10A 20A |
| Total Power Dissipation (TC = +25°C), PD | 50W |
| Total Power Dissipation (TA = +25°C), PD | 1.67W |
| Operating Junction Temperature Range, TJ | -55° to +150°C |
| Storage Temperature Range, Tstg | -55° to +150°C |
| Thermal Resistance, Junction-to-Case, RthJC | 2.5°C/W |
| Thermal Resistance, Junction-to-Ambient, RthJA | 75°C/W |
| Lead Temperature (During Soldering, 1/8" from case, 5sec), TL | +275°C |
Note 1. Pulse Width </= 6ms, Duty Cycle </= 50%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | |
| OFF Characteristics | |||||||
| Collector Cutoff Current | ICES | VCE = 80V, VBE = 0 | - | - | 10 | µA | |
| Emitter Cutoff Current | IEBO | VEB = 5V | - | - | 100 | µA | |
| ON Characteristics | |||||||
| DC Current Gain | hFE | VCE = 1V, IC = 2A, TJ = +25°C | 60 | - | - | ||
| VCE = 1V, IC = 4A, TJ = +25°C | 40 | - | - | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = 8A, IB = 400mA | - | - | 1.0 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC = 8A, IB = 800mA | - | - | 1.5 | V | |
| Dynamic Characteristics | |||||||
| Collector Capacitance | Ccb | VCB = 10V, ftest = 1MHz | - | 130 | - | pF | |
| Gain Bandwidth Product | fT | IC = 500mA, VCE = 10V, f = 20MHz | - | 50 | - | MHz | |
| Switching Times | |||||||
| Delay and Rise Time | td + tr | IC = 5A, IB1 = 500mA | - | 300 | - | ns | |
| Storage Time | ts | IC = 5A, IB1 = IB2 = 500mA | - | 500 | - | ns | |
| Fall Time | tf | - | 140 | - | ns | ||