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2SC2904
Silicon NPN Transistor
Final RF Power Output in HF band SSB mobile radio application.

E C E

The 2SC2904 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers.

WINTransceiver
E B E

Features:


Application:

Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 20V
Collector-Base Voltage, VCBO 50V
Emitter-Base Voltage, VEBO 5V
Collector Current, IC 22A
Collector Power Dissipation (TA = +25C), PD 7.8W
Collector Power Dissipation (TC = +50C), PD 200W
Operating Junction Temperature, TJ +175C
Storage Temperature Range, Tstg -55 to +175C
Thermal Resistance, Rth-c 0,75C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 20mA, IE = 0 50 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = Infinity 20 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 20mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 15V IE = 0 - - 5 mA
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 5 mA
DC Forward Current Gain hFE VCE = 10V, IC = 1A, Note 1 10 50 180  
Power Output PO VCC = 12,5V, Pin = 7W, f = 30MHz 100 110 - W
Collector Efficiency   55 60 - %

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.



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