Silicon NPN Transistor
High frequency applications.

The 2SC2512 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as VHF Tuner and Oscillator applications.


Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO 30V
Collector-Emitter Voltage, VCEO 20V
Emitter-Base Voltage, VEBO 3V
Collector Current, IC 50mA
Total Device Dissipation (TA = +25C), PD 300mW
Operating Junction Temperature, TJ +150C
Storage Temperature Range, Tstg -55 to +150C

Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Current Transfer Ratio hFE VCE = 10V, IC = 10mA 30 - -  
Current Gain-Bandwidth Product fT VCE = 10V, IC = 10mA 600 900 - MHz
Power Gain PG VCE = 12V, IC = 2mA, f = 200MHz 16 20 - dB
Noise Figure NF VCB = 12V, IC = 2mA, f = 200MHz - 3,8 5,5 dB

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