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2SC2086
Silicon NPN Transistor
RF Amplifier

The 2SC2086 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on HF band mobile radio applications.

WINTransceiver
B C E

Features:

Application:

Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 35V
Collector-Base Voltage, VCBO 75V
Emitter-Base Voltage, VEBO 4V
Collector Current, IC 1A
Collector Power Dissipation (TA = +25C), PD 0,8W
Operating Junction Temperature, TJ +135C
Storage Temperature Range, Tstg -55 to +150C
Thermal Resistance, Junction-to-Ambient, RthJA 137,5C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 75 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 35 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 10 A
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 100 A
DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 35 70 300  
Power Output PO VCC = 12V, Pin = 15mW, f = 27MHz 0,3 0,45 - W
Collector Efficiency   50 60 - %
Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.



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