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2SC2055
Silicon NPN Transistor
RF Amplifier

The 2SC2055 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on VHF band mobile radio applications.

WINTransceiver
B C E

Features:

Application:

Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 9V
Collector-Base Voltage, VCBO 18V
Emitter-Base Voltage, VEBO 4V
Collector Current, IC 0,3A
Collector Power Dissipation (TA = +25C), PD 0,5W
Operating Junction Temperature, TJ +135C
Storage Temperature Range, Tstg -55 to +150C
Thermal Resistance, Junction-to-Ambient, RthJA 220C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 18 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 9 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 10V IE = 0 - - 30 A
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 30 A
DC Forward Current Gain hFE VCE = 7V, IC = 50mA, Note 1 10 50 180  
Power Output PO VCC = 13.5V, Pin = 4mW, f = 175MHz 0,2 0,25 - W
Collector Efficiency   50 60 - %
Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.



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