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2SC1970
Silicon NPN Transistor
RF Power Output

The 2SC1970 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.

WINTransceiver
B E C

Features:

Application:

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17V
Collector-Base Voltage, VCBO 35V
Emitter-Base Voltage, VEBO 4V
Collector Current, IC 0,6A
Collector Power Dissipation (TA = +25°C), PD 1W
Collector Power Dissipation (TC = +50°C), PD 5W
Operating Junction Temperature, TJ +150°C
Storage Temperature Range, Tstg -55° to +150°C
Thermal Resistance, Junction-to-Case, RthJC 25°C/W
Thermal Resistance, Junction-to-Ambient, RthJA 125#176;C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 5mA, IE = 0 40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 100 µA
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 100 µA
DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180  
Power Output PO VCC = 13.5V, Pin = 600mW, f = 175MHz 1 1,2 - W
Collector Efficiency   50 60 - %

Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.




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