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2SC1969
Silicon NPN Transistor
Final RF Power Output

The 2SC1969 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

WINTransceiver
B C E

Features:


Application:

Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 25V
Collector-Base Voltage, VCBO 60V
Emitter-Base Voltage, VEBO 5V
Collector Current, IC 6A
Collector Power Dissipation (TA = +25C), PD 1.7W
Collector Power Dissipation (TC = +50C), PD 20W
Operating Junction Temperature, TJ +150C
Storage Temperature Range, Tstg -55 to +150C
Thermal Resistance, Junction-to-Case, RthJC 6.25C/W
Thermal Resistance, Junction-to-Ambient, RthJA 73.5C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 25 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 A
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 A
DC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 10 50 180  
Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 16 18 - W
Collector Efficiency   60 70 - %

Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.


Collector Dissipation
Output Power vs. Supply Voltage
Output Power vs. Input Power


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