Silicon NPN Transistor
High frequency applications.

The 2SC1906 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as VHF amplifier, Oscillator and Mixer applications.


Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO 30V
Collector-Emitter Voltage, VCEO 19V
Emitter-Base Voltage, VEBO 2V
Collector Current, IC 50mA
Total Device Dissipation (TA = +25C), PD 300mW
Operating Junction Temperature, TJ +150C
Storage Temperature Range, Tstg -55 to +150C

Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Current Transfer Ratio hFE VCE = 10V, IC = 10mA 40 - -  
Current Gain-Bandwidth Product fT VCE = 10V, IC = 10mA 600 1000 - MHz
Power Gain PG VCE = 10V, IC = 5mA, f = 200MHz - 18 - dB

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