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2N3866
Silicon NPN Transistor

Frequency Multiplier and Driver in VHF/UHF Transmitters

TO-39 Case
WINTransceiver
C  B  E



Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO     30V
Collector-Base Voltage, VCBO     55V
Emitter-Base Voltage, VEBO     3.5V
Continuous Collector Current, IC     400mA
Total Device Dissipation (TC = +25C), PD     5W
            Derate above 25C     28.6mW/C
Storage Temperature Range, Tstg     -65C to +200C

Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage VCER(sus) IC = 5mA, RBE = 10 Ohm 55 - - V
Collector-Emitter Sustaining Voltage VCEO(sus) IC = 5mA, IB = 0 30 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IF = 100A, IC = 0 3.5 - - V
Collector Cutoff Current ICEO VCE = 28V, IB = 0 - - 0.02 mA
ICEX VCE = 30V, VBE = -1.5V, TC = +200C - - 5.0 mA
VCE = 55V, VBE = -1.5V - - 0.1 mA
Emitter Cutoff Current IEBO VBE = 3.5V, IC = 0 - - 0.1 mA
ON Characteristics
DC Current Gain hFE IC = 50mA, VCE = 5V 25 - 200  
Collector-Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 20mA - - 1.0 V
Small-Signal Characteristics
Current-Gain Bandwidth Product fT IC = 50mA, VCE = 15V, f = 200MHz 800 - - MHz
Output Capacitance Cobo VCB = 28V, IE = 0, f = 1MHz - - 3.0 pF
Functional Test
Common Emitter Amplifier Power Gain GPE POUT = 1W, VCC = 28V, f = 400MHz 10 - - dB
Collector Efficiency   POUT = 1W, VCC = 20V, f = 400MHz 45 - - %



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