Make your own free website on Tripod.com
Home

2N3632
Silicon NPN Transistor
RF Power Output

15 Watt RF Power output in VHF Transmitters up to 175MHz
TO-60 Case
WINTransceiver
C  B  E


Absolute Maximum Ratings:
Collector-Base Voltage, VCB 65V
Collector-Emitter Voltage, VCEO 40V
Emitter-Base Voltage, VEB 4V
Collector Current, IC 3A
Total Device Dissipation (TC = +25C), PD
            Derate Above 25C
23W
131mW/C
Operating Junction Temperature Range, TJ -65 to +200C
Storage Temperature Range, Tstg -65 to +200C

Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage V(BR)CEO(sus) IC = 200mA, IB = 0, Note 1 40 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 0.25mA, IC = 0 4 - - V
Collector Cutoff Current ICEO VCE = 30V, IB = 0 - - 0.25 mA
ICEX VCE = 30V, VBE(off) = 1.5V, TC = +200C - - 10 mA
VCE = 65V, VBE(off) = 1.5V - - 5 mA
ICBO VCB = 65V, IE = 0 - - 1 mA
Emitter Cutoff Current IEBO VBE = 4V, IB = 0 - - 0.25 mA
ON Characteristics
DC Current Gain hFE VCE = 5V, IC = 1A 5 - -  
Collector-Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 100mA - - 1.0 V
Base-Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 5A - - 1.5 V
Dynamic Characteristics
Current Gain-Bandwidth Product fT VCE = 28V, IC = 150mA, f = 100MHz - 400 - MHz
Output Capacitance Cob VCB = 30V, IE = 0, f = 100kHz - 16 20 pF
Functional Tests
Power Input Pin VCE = 28V, Pout = 2.5W, f = 175MHz - - 0.25 W
Common-Emitter Amplifier Power Gain Gpe 10 - - dB
Collector Efficiency   50 - - %

Note 1. Pulsed through 25mH inductor.



CB Radio Banner Exchange