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2N3375
Silicon NPN Transistor
RF Power Output

Description:
The 2N3375 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance, and low output capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multiplier circuits and is specifically designed for operation in the VHF-UHF region.
TO-60 Case
WINTransceiver
C  B  E



Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO 65V
Collector-Emitter Voltage, VCEO 40V
Emitter-Base Voltage, VEBO 4V
Collector Current, IC 1.5A
Total Device Dissipation (TC = +25C), PD
            Derate Above 25C
11.6W
6.4mW/C
Operating Junction Temperature Range, TJ -65 to +200C
Storage Temperature Range, Tstg -65 to +200C
Thermal Resistance, Junction-to-Case, RthJC +15C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICEO VCE = 30V, IB = 0 - - 0.1 mA
Collector-Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 65 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 4 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 0 to 200mA, IB = 0, Note 1 40 - - V
V(BR)CEV IC = 0 to 200mA, VBE = -1.5V, Note 1 65 - - V
Current Gain-Bandwidth Product fT VCE = 28V, IC = 150mA, f = 100MHz - 500 - MHz
Output Capacitance Cob VCB = 30V, IC = 0, f = 1MHz - - 10 pF
RF Power Output, Class C, Unneutralized Pout VCE = 28V, Pin = 1W, f = 175MHz 3 - - W

Note 1. Pulsed through 25mH inductor, Duty Cycle = 50%.




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